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| Datasheet File OCR Text: |
| RB521G-30 diodes 1/2 schottky barrier diode RB521G-30 z application rectifying small power z features 1) ultra small mold type. (vmd2) 2) high reliability z construction silicon epitaxial planer z external dimensions (units : mm) rohm : vmd2 eiaj : jedec : 0.6 0.05 cathode mark 0.27 0.03 0.13 0.03 0.5 0.05 1.0 0.05 1.4 0.05 f z absolute maximum ratings (ta=25 c) parameter symbol limits unit v r 30 v reverse voltage (dc) i o 100 ma average rectified forward current i fsm 1a forward current surge peak ? tj 125 c junction temperature tstg ? 40~ + 125 c storage temperature ? 60hz, 1cyc. z electrical characteristics (ta=25 c) parameter forward voltage reverse current symbol min. typ. max. unit conditions v f i r ? ? ? ? 0.350 10 v a i f = 10ma v r = 10v ? please pay attention to static electricity when handling.
RB521G-30 diodes 2/2 z electrical characteristic curves (ta=25 c) 0.001 0.01 0.1 1 10 100 1000 forward current : i f (ma) forward voltage : v f (mv) 0 100 200 300 400 500 600 fig.1 forward characteristics 125 c ? 25 c 75 c 25 c 10n 100n 1 10 100 1m 10m reverse current : i r (a) reverse voltage : v r (v) 0 5 10 15 20 25 35 30 fig.2 reverse characteristics 25 c 75 c ? 25 c 125 c 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 reverse voltage : v r ( v) capacitance between terminals : c t ( pf) fig.3 capacitance between terminals characteristics |
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